패턴된 탄소 나노파이버 어레이의 성장

Abstract

Morphology of carbon nanostructures, grown by dc plasma-enhanced chemical vapor deposition, were investigated. Underlying layers were found to affect the morphology significantly. Carbon nanocones with tapered diameter were often obtained on bare and thermally oxidized Si substrates. Chemical analyses showed that plasma etching and redeposition enhanced lateral growth, resulting in forming carbon nanocones containing Si. Deposition of thin films, such as Ti, TiN, and W, suppressed the unwanted etching and enabled growth of needle-shaped carbon nanostructures.