Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)ELECTRICAL ENGINEERING(전자공학부)Articles
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dc.contributor.author유경렬-
dc.date.accessioned2019-06-04T02:04:57Z-
dc.date.available2019-06-04T02:04:57Z-
dc.date.issued2007-02-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 50, Page. 365~367en_US
dc.identifier.issn0374-4884-
dc.identifier.urihttp://www.jkps.or.kr/journal/view.html?uid=8425&vmd=Full-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/106255-
dc.description.abstractA measurement method for the linewidth enhancement factor of a semiconductor Fabry-Perot (FP) laser operating above threshold is presented. This measurement method is designed to have a simple structure and an extend operational range. The active carrier density of the FP laser is modulated by optical injection locking, which makes it possible to measure the variation of optical spectrum from the injected optical frequency.en_US
dc.language.isoen_USen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectSemiconductor FP laseren_US
dc.subjectalpha -factoren_US
dc.subjectOptical injection lockingen_US
dc.titleA Simple Method for Measurement of the ¥á-Factor in Semiconductor Fabry-Perot Lasers Operating above Thresholden_US
dc.typeArticleen_US
dc.identifier.doi10.3938/jkps.50.365-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorYoo, Kyungyul-
dc.relation.code2007205987-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.piddrwhoyoo-
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