Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심상완 | - |
dc.date.accessioned | 2019-05-31T01:09:10Z | - |
dc.date.available | 2019-05-31T01:09:10Z | - |
dc.date.issued | 2018-10 | - |
dc.identifier.citation | ADVANCED ENERGY MATERIALS, v. 8, No. 33, Article no. 1802154 | en_US |
dc.identifier.issn | 1614-6832 | - |
dc.identifier.issn | 1614-6840 | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/full/10.1002/aenm.201802154 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/106168 | - |
dc.description.abstract | Surface recombination is a major bottleneck for realizing highly efficient micro/nanostructure solar cells. Here, parametric studies of the influence of Si microwire (SiMW) surface-facet orientation (rectangular with flat-facets, {110}, {100} and circular), with a fixed height of 10 mu m, diameter (D = 1.5-9.5 mu m), and sidewall spacing (S = 2.5-8.5 mu m), and mesh-grid density (1-16 mm(-2)) on recombination and carrier collection in SiMW solar cells with radial p-n junctions are reported. An effective surface passivation layer composed of thin thermally grown silicon dioxide (SiO2) and silicon nitride (SiNx) layers is employed. For a fixed D of 1.5 mu m, tight SiMW spacing results in improved short-circuit current density (J(sc) = 30.1 mA cm(-2)) and sparse arrays result in open-circuit voltages (V-oc = 0.552 V) that are similar to those of control Si planar cells. For a fixed S, smaller D results in better light trapping at shorter wavelengths and higher J(sc) while larger D exhibits better light trapping at larger wavelengths and a higher V-oc. With a mesh-grid electrode the power conversion efficiency increases to 15.3%. These results provide insights on the recombination mechanisms in SiMW solar cells and provide general design principles for optimizing their performance. | en_US |
dc.description.sponsorship | The authors thank Mr. Ahmed T. El Thakeb for the absorption calculations, Mr. Michael Jensen for initial calibration of SiMW etching, Mr. Jonathan Scharf for the lifetime measurements, and Dr. Yunbin Guan for the SIMS measurement. The authors also thank Prof. Yu-Hwa Lo, Prof. David P. Fenning, Dr. Yuchun Zhou, Dr. Yu-hsin Liu, and Dr. Alireza Kargar for the helpful discussions. The authors acknowledge Dr. Michael Williams and the UC San Diego Nano3 staff for technical assistance. The electron beam lithography, focused ion beam, transmission electron microscopy, and ultrafast pump-probe measurements were performed at the Center for Integrated Nanotechnologies (CINT), a U.S. Department of Energy Office of Basic Energy Sciences user facility at Los Alamos National Laboratory (Contract No. DE-AC52-06NA25396) and Sandia National Laboratories (Contract No. DE-AC04-94AL85000) through a CINT user proposal. This work was supported by UC San Diego faculty startup funds and by the National Science Foundation CAREER Award No. ECCS-1351980. Y.G.R. designed all experiments, fabricated the devices, performed all analysis, and cowrote the manuscript with S.A.D. R.C. performed e-beam lithography. R.C., R.L., and N.L. performed the TEM analysis. T.W. and J.Y. performed SIMS measurements. S.S. and R.P.P. performed pump-probe measurements and analysis. S.A.D. led the project, designed the experiments, performed all analysis, and cowrote the manuscript with Y.G.R. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | WILEY-V C H VERLAG GMBH | en_US |
dc.subject | microwire facet | en_US |
dc.subject | Si | en_US |
dc.subject | solar cell | en_US |
dc.subject | surface passivation | en_US |
dc.subject | surface recombination | en_US |
dc.title | Surface Passivation and Carrier Collection in {110}, {100} and Circular Si Microwire Solar Cells | en_US |
dc.type | Article | en_US |
dc.relation.no | 1802154 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1002/aenm.201802154 | - |
dc.relation.page | 1-11 | - |
dc.relation.journal | ADVANCED ENERGY MATERIALS | - |
dc.contributor.googleauthor | Ro, Yun Goo | - |
dc.contributor.googleauthor | Chen, Renjie | - |
dc.contributor.googleauthor | Liu, Ren | - |
dc.contributor.googleauthor | Li, Nan | - |
dc.contributor.googleauthor | Williamson, Theodore | - |
dc.contributor.googleauthor | Yoo, Jinkyoung | - |
dc.contributor.googleauthor | Sim, Sangwan | - |
dc.contributor.googleauthor | Prasankumar, Rohit P. | - |
dc.contributor.googleauthor | Dayeh, Shadi A. | - |
dc.relation.code | 2018010834 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | swsim | - |
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