Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오재응 | - |
dc.date.accessioned | 2019-05-27T05:59:14Z | - |
dc.date.available | 2019-05-27T05:59:14Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v. 15, No. 3, Page. 232-237 | en_US |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.issn | 1878-1675 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S156717391400409X | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/106013 | - |
dc.description.abstract | The microstructural properties of a GaN thin film grown on a Si(110) substrate under various ammonia (NH3)-flux conditions were observed to study growth mode and defect evolution. The surface flatness of GaN thin films was improved with the increase of the NH3 flux while the thickness was decreased by increasing the NH3 flux. In addition, the crystalline quality of the GaN film grown under the lower NH3 flux (100 sccm) was better than that of the film under the higher NH3 flux (400 sccm). The different dislocation behaviors depending on NH3 fluxes were observed; the low density of dislocations was measured and most of dislocations penetrating the thin film was mixed- and edge-type dislocations when GaN was grown under the low NH3 flux condition while the high density of dislocation and many mixed- and screw-type dislocations penetrating the film were observed in the GaN film grown under the high NH3 flux. These phenomena are demonstrated by using a kinetic model related to the role of NH3. (C) 2014 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This work is supported by Korea Research Council of Fundamental Science and Technology through a Basic Research Project managed by the Korea Research Institute of Standards. Work in part supported by "Nano-Material Technology Development Program through the National Research Foundation of Korea (grant number: 2011-0030233)". | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Nitrides | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.subject | Dislocation | en_US |
dc.subject | Gas-source molecular beam epitaxy | en_US |
dc.subject | Silicon substrate | en_US |
dc.title | Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux | en_US |
dc.type | Article | en_US |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1016/j.cap.2014.12.017 | - |
dc.relation.page | 232-237 | - |
dc.relation.journal | CURRENT APPLIED PHYSICS | - |
dc.contributor.googleauthor | Lee, Jong Hoon | - |
dc.contributor.googleauthor | Ryu, Hyun | - |
dc.contributor.googleauthor | Ahn, Sang Jung | - |
dc.contributor.googleauthor | Noh, Young-Kyun | - |
dc.contributor.googleauthor | Oh, Jae-Eung | - |
dc.contributor.googleauthor | Kim, Young Heon | - |
dc.relation.code | 2015001919 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | joh | - |
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