Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2019-05-23T04:21:46Z | - |
dc.date.available | 2019-05-23T04:21:46Z | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v. 53, no. 2, page. 119-120 | en_US |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.issn | 1350-911X | - |
dc.identifier.uri | https://www.crossref.org/iPage?doi=10.1049%2Fel.2016.3007 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/105852 | - |
dc.description.abstract | We investigated the stress-induced resistance drift and breakdown characteristics in MgAl2O4 (MAO)-based magnetic tunnel junctions (MTJs) with the MAO thickness of similar to 0.9 nm. The occurrence of trap sites around the tunnel barrier-electrode interfaces was characterised via interval voltage stress (IVS) and constant voltage stress (CVS) experiments, in which the occurrence of trap sites affects the resistance drift in IVS and time- dependent dielectric breakdown in CVS. The observed resistance drift ratios were almost the same for positive and negative applied voltages, indicating that the difference in the interface structure was negligibly small between the top and bottom MAO/CoFe interfaces in the MAO-based MTJs. More interestingly, the resistance drift ratios were very low compared with the results of a previous study on MgO-based MTJs. MAO- based MTJs is likely to be an effective alternative that can be used to improve MTJ device reliability. | en_US |
dc.description.sponsorship | This research was supported by the Ministry of Trade, Industry and Energy (10044608) and by a support program of the Korea Semiconductor Research Consortium for the development of future semiconductor devices and this research was supported by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2016M3A7B4910398). | en_US |
dc.language.iso | en | en_US |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | en_US |
dc.title | Reliability of magnetic tunnel junctions with a spinel MgAl2O4 film | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 53 | - |
dc.identifier.doi | 10.1049/el.2016.3007 | - |
dc.relation.page | 119-120 | - |
dc.relation.journal | ELECTRONICS LETTERS | - |
dc.contributor.googleauthor | Choi, C. M. | - |
dc.contributor.googleauthor | Sukegawa, H. | - |
dc.contributor.googleauthor | Mitani, S. | - |
dc.contributor.googleauthor | Song, Y. | - |
dc.relation.code | 2017001260 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.