Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이정호 | - |
dc.date.accessioned | 2019-05-03T04:30:52Z | - |
dc.date.available | 2019-05-03T04:30:52Z | - |
dc.date.issued | 2017-05 | - |
dc.identifier.citation | Progress in Photovoltaics: Research and Applications, v. 25, No. 5, Page. 376-383 | en_US |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.issn | 1099-159X | - |
dc.identifier.uri | https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2873 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/103317 | - |
dc.description.abstract | Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field-effect passivation performance. Here, we report that simple annealing in a H2S ambient induced additional negative fixed charges at the interface between atomic-layer-deposited Al2O3 and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to similar to 5.9x10(12)cm(-2) and similar to 780s, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright (C) 2017 John Wiley Sons, Ltd. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (no. 2015R1A5A1037548). Additional support was provided by the International Collaborative Energy Technology R&D Program of the KETEP granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea (no. 20168520011370). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | John Wiley & Sons Inc. | en_US |
dc.subject | nanostructured Si solar cells | en_US |
dc.subject | field-effect passivation | en_US |
dc.subject | sulfur passivation | en_US |
dc.subject | Al2O3 | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | H2S | en_US |
dc.subject | AL2O3 | en_US |
dc.subject | ATOMIC-LAYER-DEPOSITION | en_US |
dc.subject | CRYSTAL-STRUCTURE | en_US |
dc.subject | SURFACE PASSIVATION | en_US |
dc.subject | SILICON | en_US |
dc.subject | ALUMINUM | en_US |
dc.subject | DECOMPOSITION | en_US |
dc.subject | FILMS | en_US |
dc.title | Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 25 | - |
dc.identifier.doi | 10.1002/pip.2873 | - |
dc.relation.page | 376-383 | - |
dc.relation.journal | Progress in Photovoltaics: Research and Applications | - |
dc.contributor.googleauthor | Kim, DW | - |
dc.contributor.googleauthor | Song, JW | - |
dc.contributor.googleauthor | Park, YM | - |
dc.contributor.googleauthor | Lee, JH | - |
dc.contributor.googleauthor | Park, TJ | - |
dc.relation.code | 2017038237 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | jungho | - |
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