Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오새룬터 | - |
dc.date.accessioned | 2019-04-29T23:59:36Z | - |
dc.date.available | 2019-04-29T23:59:36Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 8, No. 49, Page. 33821-33828 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/acsami.6b11774 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/102964 | - |
dc.description.abstract | Amorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H2O2) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In2O3) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In2O3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 degrees C. We propose growth temperature-dependent surface reactions during the In2O3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm(2) V-1 s(-1) and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications. | en_US |
dc.description.sponsorship | This research was mainly supported by the MOTIE (Ministry of Trade, Industry & Energy) (Project no. 10051403, 10052020, and 10052027) and KDRC (Korea Display Research Corporation). Also, this work was partially supported by the research fund of Samsung Display. In particular, the authors thank UP Chemical Company for supporting the INCA-1 precursor. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | flexible TFT | en_US |
dc.subject | high mobility | en_US |
dc.subject | indium zinc oxide | en_US |
dc.subject | low temperature | en_US |
dc.subject | oxide semiconductor | en_US |
dc.title | Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 49 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1021/acsami.6b11774 | - |
dc.relation.page | 33821-33828 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Sheng, Jiazhen | - |
dc.contributor.googleauthor | Lee, Hwan-Jae | - |
dc.contributor.googleauthor | Oh, Saeroonter | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2016001740 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | sroonter | - |
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