Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2019-04-24T01:33:08Z | - |
dc.date.available | 2019-04-24T01:33:08Z | - |
dc.date.issued | 2016-08 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 8, No. 32, Page. 20880-20884 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/acsami.6b06643 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/102660 | - |
dc.description.abstract | Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2015R1A5A1037548), and by the MOTIE (Ministry of Trade, Industry & Energy) (No. 10053098) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | atomic layer deposition | en_US |
dc.subject | HfO2 | en_US |
dc.subject | InP | en_US |
dc.subject | interfacial passivation layer | en_US |
dc.subject | ZnS | en_US |
dc.subject | SULFUR PASSIVATION | en_US |
dc.subject | LEAKAGE CURRENT | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | GAAS | en_US |
dc.subject | GATE | en_US |
dc.subject | DIELECTRICS | en_US |
dc.subject | TRANSISTORS | en_US |
dc.subject | OXIDES | en_US |
dc.title | Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates | en_US |
dc.type | Article | en_US |
dc.relation.no | 32 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1021/acsami.6b06643 | - |
dc.relation.page | 20880-20884 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Kim, S.H | - |
dc.contributor.googleauthor | Joo, SY | - |
dc.contributor.googleauthor | Jin, HS | - |
dc.contributor.googleauthor | Kim, WB | - |
dc.contributor.googleauthor | Park, TJ | - |
dc.relation.code | 2016001740 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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