Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2019-04-16T02:29:42Z | - |
dc.date.available | 2019-04-16T02:29:42Z | - |
dc.date.issued | 2016-01 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 4, No. 4, Page. 850-856 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | http://pubs.rsc.org/-/content/articlehtml/2016/tc/c5tc03267a | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/102060 | - |
dc.description.abstract | The effects of sulfur passivation of the Ge substrate were studied through (NH4)(2)S solution treatment and the rapid thermal annealing under an H2S atmosphere prior to atomic-layer-deposition (ALD) of HfO2. While a chemically unstable and uneven sulfur layer was formed by (NH4)(2)S solution treatment, a stable, highly uniform and dense sulfur layer with a thickness of similar to 2 nm was formed by H2S annealing on Ge substrates. The sulfur concentration at the interface increased with H2S annealing temperature. Sulfur passivation suppressed the diffusion of Ge into the HfO2 film and any interfacial layer growth during ALD, which resulted in a decreased equivalent oxide thickness of gate insulator. The interface properties, such as interface defect state density and hysteresis in capacitance-voltage behavior, were also improved by sulfur passivation through H2S annealing. H2S annealing is much more compatible with a mass-production process compared to the conventional (NH4)(2)S solution treatment process. | en_US |
dc.description.sponsorship | This study was supported by the New & Renewable Energy (No. 20123010010160) and Human Resources Development program (No. 20154030200680) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the South Korean government Ministry of Trade, Industry and Energy. CSH was supported by the National Research Foundation of Korea (NRF) grant (No. NRF-2014R1A2A1A10052979) of the Republic of Korea. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | SEMICONDUCTOR CAPACITORS | en_US |
dc.subject | OXIDATION | en_US |
dc.subject | DENSITY | en_US |
dc.title | High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate | en_US |
dc.type | Article | en_US |
dc.relation.no | 4 | - |
dc.relation.volume | 4 | - |
dc.identifier.doi | 10.1039/C5TC03267A | - |
dc.relation.page | 850-856 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Seok, Tae Jun | - |
dc.contributor.googleauthor | Cho, Young Jin | - |
dc.contributor.googleauthor | Jin, Hyun Soo | - |
dc.contributor.googleauthor | Kim, Dae Hyun | - |
dc.contributor.googleauthor | Kim, Dae Woong | - |
dc.contributor.googleauthor | Lee, Sang-Moon | - |
dc.contributor.googleauthor | Park, Jong-Bong | - |
dc.contributor.googleauthor | Won, Jung-Yeon | - |
dc.contributor.googleauthor | Kim, Seong Keun | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.contributor.googleauthor | Hwang, Cheol Seong | - |
dc.relation.code | 2016001750 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
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