Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 노정진 | - |
dc.date.accessioned | 2019-04-15T00:13:56Z | - |
dc.date.available | 2019-04-15T00:13:56Z | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v. 50, No. 10, Page. 2342-2352 | en_US |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.issn | 1558-173X | - |
dc.identifier.uri | http://ieeexplore.ieee.org/document/7254248/ | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/101836 | - |
dc.description.abstract | This paper presents a delta-sigma modulator operating at a supply voltage of 0.4 V. The designed delta-sigma modulator uses a proposed hybrid switching integrator and operates at a low supply voltage without clock boosting or bootstrapped switches. The proposed integrator consists of both switched-resistor and switched-capacitor operations and significantly reduces distortion at a low supply voltage. Variation in the turn-on resistance, which is the main source of distortion, is avoided by placing the switches at the virtual ground node of the amplifier. The proposed low-voltage design scheme can replace commonly-used clock boosting techniques, which rely on internal high-voltage generation circuits. A fabricated modulator achieves a 76.1 dB signal-to-noise-plus-distortion ratio (SNDR) and an 82 dB dynamic range at a 20 kHz bandwidth. The measured total power consumption is 63 mu W from a 0.4 V supply voltage. The measured results show robust SNDR performance, even at +/- 10% supply voltage variations. The measured results also show stable performance over a wide temperature range. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Hybrid switching integrator | en_US |
dc.subject | low-power delta-sigma modulator | en_US |
dc.title | A 0.4 V 63 mu W 76.1 dB SNDR 20 kHz Bandwidth Delta-Sigma Modulator Using a Hybrid Switching Integrator | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 50 | - |
dc.identifier.doi | 10.1109/JSSC.2015.2468857 | - |
dc.relation.page | 2342-2352 | - |
dc.relation.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.contributor.googleauthor | Yoon, Younghyun | - |
dc.contributor.googleauthor | Choi, Danbi | - |
dc.contributor.googleauthor | Roh, Jeongjin | - |
dc.relation.code | 2015003739 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | jroh | - |
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