Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2019-03-22T08:09:05Z | - |
dc.date.available | 2019-03-22T08:09:05Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, v. 38, Page. 379-383 | en_US |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.issn | 1878-5530 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1566119916303901?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/101109 | - |
dc.description.abstract | Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 x 10(4# s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms. (C) 2016 Published by Elsevier B.V. | en_US |
dc.description.sponsorship | The authors would like to thank Prof. Haibo Xu from the Ocean University of China for providing the graphene quantum dots. This research was supported by Basic Science Research Program through the gs1:National Research Foundation of Korea funded by the gs2:Ministry of Education, Science and Technology (2016R1A2A1A05005502) and by the National Natural Science Foundation of China (61377027). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Tristable switching | en_US |
dc.subject | Graphene quantum dot | en_US |
dc.subject | Poly(methyl methacrylate) | en_US |
dc.subject | Electrical characteristic | en_US |
dc.subject | Filament | en_US |
dc.subject | Conduction mechanisms | en_US |
dc.title | Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers | en_US |
dc.type | Article | en_US |
dc.relation.volume | 38 | - |
dc.identifier.doi | 10.1016/j.orgel.2016.09.010 | - |
dc.relation.page | 379-383 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.contributor.googleauthor | Ooi, Poh Choon | - |
dc.contributor.googleauthor | Lin, Jian | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.contributor.googleauthor | Li, Fushan | - |
dc.relation.code | 2016003624 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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