Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최성철 | - |
dc.date.accessioned | 2019-03-19T06:31:00Z | - |
dc.date.available | 2019-03-19T06:31:00Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO. 11, Page. 11330-11334 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000011/art00039;jsessionid=5hjejodp3gthf.x-ic-live-02 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100989 | - |
dc.description.abstract | Transparent conducting oxides (TCOs) are very important materials for application in flat panel displays, thin-film solar cells, and touch panels. These days, the low-temperature synthesis of TCO thin films is being actively researched for realizing flexible electronics such as displays and solar cells. TCO thin films, mainly tin-doped indium oxide, are normally fabricated by high-vacuum sputtering. However, fluorine-doped tin oxide (FTO) has been in use for thin-film solar cells from the beginning. Our study attempts to lower the deposition temperature of FTO to 250 degrees C, which is suitable for deposition on polyimide substrates. We varied the F/Sn precursor ratio at different deposition temperatures, and found that a low F/Sn ratio of about 0.15 produces the lowest electrical resistivity below 350 degrees C, whereas a F/Sn ratio of 1.5 is obtained at 450 degrees C. At lower temperatures, crystal growth is very slow, and therefore, we should conduct very slow deposition to obtain high-quality TCO thin films. | en_US |
dc.description.sponsorship | The authors are appreciated for financial support for this research work by Core Material Research Program of Korean Ministry of Commerce, Industry and Energy (Project No. 10041161) and partial support from the Strategic Research Development Program of Korea Institute of Ceramic Engineering and Technology (KPP12002). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Transparent Conducting Oxide | en_US |
dc.subject | Fluorine Doped Tin Oxide | en_US |
dc.subject | Spray Pyrolysis Deposition | en_US |
dc.subject | Doping Ratio | en_US |
dc.subject | Electrical Resistivity | en_US |
dc.title | Doping Ratio Control of Fluorine-Doped Tin Oxide for a High-Quality Transparent Conducting Electrode | en_US |
dc.type | Article | en_US |
dc.relation.no | 11 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.1166/jnn.2016.13503 | - |
dc.relation.page | 11330-11334 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Kim, Chang-Yeoul | - |
dc.contributor.googleauthor | Go, Eun-Byul | - |
dc.contributor.googleauthor | Choi, Jae-Seok | - |
dc.contributor.googleauthor | Choi, Sung Churl | - |
dc.relation.code | 2016003411 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | choi0505 | - |
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