Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 송윤흡 | - |
| dc.date.accessioned | 2019-03-15T00:47:33Z | - |
| dc.date.available | 2019-03-15T00:47:33Z | - |
| dc.date.issued | 2016-11 | - |
| dc.identifier.citation | 2016년 대한전자공학회 추계학술대회 논문집, Page. 219-222 | en_US |
| dc.identifier.uri | http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07071419 | - |
| dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100825 | - |
| dc.description.abstract | In this paper, we investigated the threshold voltage (VT) dispersion and on-current in poly-GaAs used for a channel material in 3D NAND flash memory. Using simulation, stings of NAND flash memory with 12, 24, 36, and 48 cells were implemented and electrical properties were extracted. It is revealed that the on-current in poly-GaAs channel is larger than in poly-Si channel due to the difference in mobility. In addition, the VT dispersion tends to decrease as the numbers of stacked layers increase in case of poly-GaAs channel. | en_US |
| dc.description.sponsorship | 이 논문은 2016년도 정부(미래창조과학부)의 재원으로 한국연구재단-나노․소재기술개발사업의 지원을 받아 수행된 연구임(NRF-2016M3A7B4910398) | en_US |
| dc.language.iso | ko_KR | en_US |
| dc.publisher | 대한전자공학회 | en_US |
| dc.title | Poly-GaAs 채널을 갖는 3D NAND flash memory 전기적 특성 연구 | en_US |
| dc.title.alternative | A investigation on electrical properties of poly-GaAs channel in 3D NAND flash memory | en_US |
| dc.type | Article | en_US |
| dc.relation.page | 1-4 | - |
| dc.relation.journal | 전자공학회지 | - |
| dc.contributor.googleauthor | 한성종 | - |
| dc.contributor.googleauthor | 오영택 | - |
| dc.contributor.googleauthor | 송윤흡 | - |
| dc.contributor.googleauthor | Han, Sung-Jong | - |
| dc.contributor.googleauthor | Oh, Young-Taek | - |
| dc.contributor.googleauthor | Song, Yun-Heub | - |
| dc.relation.code | 2012220550 | - |
| dc.sector.campus | S | - |
| dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
| dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
| dc.identifier.pid | yhsong2008 | - |
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