Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2019-03-06T01:16:18Z | - |
dc.date.available | 2019-03-06T01:16:18Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO. 10, Page. 10290-10293 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00025 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100490 | - |
dc.description.abstract | The electrical properties of silicon-oxide-nitride-oxide-siliconmemory devices with nanoscale high-k structures in the charge trap layer were investigated. Simulation results showed that both the amount of trap charge injected in the nitride layer and the retention characteristics were improved by employing suitable high-k structures. The threshold voltage shift of the optimized device was increased by 9% from the conventional device without high-k structures. The enhancement mechanisms for the electrical characteristics can be explained in terms of the vertical electric field in the charge trap layer and the tunneling oxide layer. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502), and this research was partially supported by Samsung Electronics Co. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Flash Memories | en_US |
dc.subject | Nanoscale Devices | en_US |
dc.subject | Simulation | en_US |
dc.subject | Silicon Nitride | en_US |
dc.subject | SONOS Devices | en_US |
dc.subject | Threshold Voltage | en_US |
dc.title | Enhancement Mechanisms of the Silicon-Oxide-Nitride-Oxide-Silicon Memory Devices with Nanoscale High-k Structures | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.1166/jnn.2016.13146 | - |
dc.relation.page | 10290-10293 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Jung, Hyun Soo | - |
dc.contributor.googleauthor | Yoo, Keon-Ho | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2016003411 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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