2011-12 | Structure, Raman, and photoluminescence properties of SnO2/MgO core-shell nanowires | 최창환 |
2019-07 | Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device | 최창환 |
2012-09 | A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal-Oxide-Semiconductor Device Integration Applications | 최창환 |
2017-05 | Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric | 최창환 |
2021-02 | Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material | 최창환 |
2012-02 | Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal-Oxide-Semiconductor Capacitors | 최창환 |
2016-10 | Suppression of boron diffusion using carbon co-implantation in DRAM | 최창환 |
2020-07 | Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering | 최창환 |
2020-10 | Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor | 최창환 |
2016-09 | Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post Annealing | 최창환 |
2019-08 | Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics | 최창환 |
2012-01 | Thickness and material dependence of capping layers on flatband voltage (V-FB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications | 최창환 |
2018-10 | Thin Si wafer substrate bonding and de-bonding below 250 degrees C for the monolithic 3D integration | 최창환 |
2021-01 | Towards engineering in memristors for emerging memory and neuromorphic computing: A review | 최창환 |
2019-04 | Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics | 최창환 |
2020-08 | Two-terminal artificial synapse with hybrid organic-inorganic perovskite (CH3NH3)PbI3 and low operating power energy (similar to 47 fJ/mu m(2)) | 최창환 |
2018-04 | Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET | 최창환 |