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A Mask Generation Approach to Double Patterning Technology with Inverse Lithography

Title
A Mask Generation Approach to Double Patterning Technology with Inverse Lithography
Author
안일신
Keywords
lithography; lithography simulation; double patterning; inverse lithography; OPTICAL LITHOGRAPHY
Issue Date
2008-11
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 11, Page. 8333-8337
Abstract
Pattern reduction has generated much interest in development effective methods of reducing the feature Sizes Of microelectronic and data-storage devices. For below-32-nm node technology, the bottom-up approach, namely, self-assembly, has obstacles Such as the insufficient Support of processes and mass production, and the top-down approaches. namely, photolithography, the extremely ultraviolet (EUV) technique, and high-index fluid-based immersion ArF lithography. are Still under development. As one of the solutions for below-32 nm node technology. double patterning technology (DPT) has been researched. In this paper. we analytically report that the DPT pattern is 3/2 times denser than the double exposure technology (DET) pattern. and three times denser than the single-exposure pattern. An algorithm of the inverse lithography technology (ILT) based oil not mathematical functions but pixels and the lithography model is described and simulated. An algorithm of the DPT mask design with ILT is described in terms of how to use this ILT method in an integrated Computational lithography platform to handle the DPT. For its accuracy, its simulation results are compared with the simulation results obtained Without ILT and with the conventional serif optical proximity correction (OPC). The ILT results are better than other results. Hence, the ILT based on pixels and the lithography model and its application algorithm of DIPT call reduce the design complexity of mask design and the cost of production of DPT for below 32 run half pitch pattern generation.
URI
http://iopscience.iop.org/article/10.1143/JJAP.47.8333/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/80763
ISSN
0021-4922
DOI
10.1143/JJAP.47.8333
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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