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dc.contributor.author오재응-
dc.date.accessioned2018-12-06T02:45:52Z-
dc.date.available2018-12-06T02:45:52Z-
dc.date.issued2008-11-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 53, No. 5, Page. 2504-2507en_US
dc.identifier.issn0374-4884-
dc.identifier.urihttp://www.jkps.or.kr/journal/view.html?volume=53&number=9(5)&spage=2504&year=2008-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80752-
dc.description.abstractPhotoluminescence (PL) measurements were performed on as-grown, hydrogenated and hydrogenated and annealed n-type ZnO bulk samples in order to investigate the origins of their yellow and green emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the PL spectrum at room temperature, the peak intensity at 2.43 eV was unchanged and the intensity of the emission peak at 3.27 eV was strongly increased. These results indicate that the yellow band emission is due to oxygen vacancies because the emission peak at 2.10 eV disappears when these vacancies are passivated by hydrogen atoms. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the effects of hydrogenation and annealing on the ZnO bulk samples.en_US
dc.description.sponsorshipThis research at Chungnam National University was supported by the Basic Research Program of the Korea Science & Engineering Foundation (Grant No. R01-2006-000-10874-0 / M10503000169-07M0300-16910) and partially supported by the Quantum Functional Semiconductor Research Center at Dongguk University.en_US
dc.language.isoen_USen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectZnOen_US
dc.subjectPhotoluminescenceen_US
dc.subjectHydrogenationen_US
dc.subjectYellow banden_US
dc.subjectGreen banden_US
dc.subjectPassivationen_US
dc.titleHydrogenation and Annealing Effects in n-Type ZnO Bulk Samplesen_US
dc.typeArticleen_US
dc.identifier.doi10.3938/jkps.53.2504-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorShin, Y. H-
dc.contributor.googleauthorKim, M. D-
dc.contributor.googleauthorOh, J. E-
dc.contributor.googleauthorHan, M. S-
dc.contributor.googleauthorKim, S. G-
dc.contributor.googleauthorChung, K. S-
dc.relation.code2008205987-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidjoh-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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