Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2018-12-06T02:30:27Z | - |
dc.date.available | 2018-12-06T02:30:27Z | - |
dc.date.issued | 2008-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 11, Page. 8611-8614 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.1143/JJAP.47.8611/meta | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/80750 | - |
dc.description.abstract | Producing a sub-32nm line and space pattern is one of the most important issues in semiconductor manufacturing. In particular, it is important 10 produce line and space patterns in flash memory-type devices because the unit cell is mostly composed of line and space patterns. The double patterning method is regarded as the most promising technology for producing, a sub-32 nm half-pitch node. However. the double patterning method is expensive for the production and a heavy data split is required. In order to achieve cheaper and easier patterning, we propose a resist reflow process (RRP) for producing 32 nm 1 : 1 line and space patterns. In many cases, it is easier to produce a 1 : 3 pitch line and space pattern than a 1 : 1 pitch line and space pattern ill terms of the aerial image. and RRP can transform a 1 : 3 pitch aerial image to a 1 : 1 resist image. We used a home-made RRP simulation based on the Navier-Stokes equation including the surface tension effect. Solid-E of Synopsis is used for the optical simulation, and electron-beam lithography is used for the experiment to verify the concept. | en_US |
dc.description.sponsorship | This work was supported by the research fund of Hanyang University (HY-2007-1). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | INST PURE APPLIED PHYSICS | en_US |
dc.subject | resist reflow process | en_US |
dc.subject | 32 nm line and space half-pitch | en_US |
dc.subject | Navier-Stokes equation | en_US |
dc.title | Patterning of 32 nm 1:1 Line and Space by Resist Reflow Process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.47.8611 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Park, Joon-Min | - |
dc.contributor.googleauthor | Kim, Youngsang | - |
dc.contributor.googleauthor | Jeong, Heejun | - |
dc.contributor.googleauthor | An, Ilsin | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2011217131 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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