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dc.contributor.author안일신-
dc.date.accessioned2018-11-26T05:07:45Z-
dc.date.available2018-11-26T05:07:45Z-
dc.date.issued2008-08-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 8, Page. 6536-6539en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttp://iopscience.iop.org/article/10.1143/JJAP.47.6536/meta-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80632-
dc.description.abstractThe photomask (PM) surface is covered with a pellicle to protect from dust and other airborne particles. However. a defect known as haze appears on the surface of the PM during exposure even with a pellicle cover. As lithography goes into the deeper UV, the photochemical reactions of contaminants become enhanced to form haze on the PM surface. This affects the lithography as haze absorbs or scatters UV. Ellipsometry may be an ideal technique for the early detection of a haze layer. However, when the PM is covered with a pellicle, the ellipsometric data collected from the surface become extremely distorted owing to the non-normal transmission through the pellicle. In this article, we introduce a novel technique so that the conventional ellipsometric data can be obtained without removing the pellicle. If ellipsometry can be used for the inspection of the PM with a pellicle in place, the cleaning frequency of the PM will be reduced significantly.en_US
dc.language.isoen_USen_US
dc.publisherINST PURE APPLIED PHYSICSen_US
dc.subjectellipsometryen_US
dc.subjectlithographyen_US
dc.subjectphotomasken_US
dc.subjecthazeen_US
dc.subjectpellicleen_US
dc.subjectSCATTEROMETRYen_US
dc.titleEllipsometry for Pellicle-Covered Surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.6536-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorLee, Sangyouk-
dc.contributor.googleauthorKyoung, Jaisun-
dc.contributor.googleauthorSong, Chulgi-
dc.contributor.googleauthorOh, Hyekeun-
dc.contributor.googleauthorJeong, Heejun-
dc.contributor.googleauthorShin, Dong-soo-
dc.contributor.googleauthorAn, Ilsin-
dc.relation.code2011217131-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidilsin-


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