Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)APPLIED PHYSICS(응용물리학과)Articles
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dc.contributor.author강보수-
dc.date.accessioned2018-11-15T23:51:42Z-
dc.date.available2018-11-15T23:51:42Z-
dc.date.issued2008-06-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v. 92, No. 23, Arrticle no. 233507en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.2942385-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80452-
dc.description.abstractIn this study, Pt/IZO (InxZn1-xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 10(5), however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.subjectTHIN-FILMSen_US
dc.subjectZNOen_US
dc.subjectPHOTOLUMINESCENCEen_US
dc.subjectGROWTHen_US
dc.titleDefect-induced degradation of rectification properties of aged Pt/n-InxZn1-xOy Schottky diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2942385-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorKim, K. H-
dc.contributor.googleauthorKang, B. S-
dc.contributor.googleauthorLee, M. -J-
dc.contributor.googleauthorAhn, S. -E-
dc.contributor.googleauthorLee, C. B-
dc.contributor.googleauthorStefanovich, G-
dc.contributor.googleauthorXianyu, W. X-
dc.contributor.googleauthorKim, K. -K-
dc.contributor.googleauthorKim, J. S.-
dc.contributor.googleauthorYoo, I. K-
dc.contributor.googleauthorPark, Y-
dc.relation.code2008200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidbosookang-
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