Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-08-07T01:29:03Z | - |
dc.date.available | 2018-08-07T01:29:03Z | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 4, NO 32, Page. 7571-7576 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC01199C#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/74361 | - |
dc.description.abstract | Indium oxide (InOx) films are grown by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)-silanaminato]-indium (InCA-1) as the metal precursor and hydrogen peroxide (H2O2) as the oxidant. It is found that the electrical properties of the indium oxide layers strongly depend on the ALD growth temperature. Relatively low electrical resistivity (similar to 10(-4) Omega cm) and high optical transparency (>85%) are obtained at growth temperatures higher than 200 degrees C, which make the indium oxide film suitable for transparent conducting oxide (TCO) applications. On the other hand, at relatively low growth temperatures below 150 degrees C, indium oxide behaves as a transparent semiconducting oxide (TSO). Thin film transistors (TFTs) incorporating this material as the active layer exhibit reasonably high performance with saturation mobility exceeding 10 cm(2) V-1 s(-1) and a threshold voltage near 0 V. | en_US |
dc.description.sponsorship | This work was supported by the Industry technology R&D program of MOTIE/KEIT [10051080, Development of mechanical UI device core technology for small and medium-sized flexible display] and done by the MOTIE Ministry of Trade, Industry & Energy (#10051403 and #10052020) and KDRC (Korea Display Research Corporation). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | ATOMIC LAYER DEPOSITION | en_US |
dc.subject | THIN-FILMS | en_US |
dc.subject | PRECURSOR | en_US |
dc.subject | SILICA | en_US |
dc.subject | GROWTH | en_US |
dc.subject | TEMPERATURE | en_US |
dc.subject | TRANSISTORS | en_US |
dc.subject | EPITAXY | en_US |
dc.title | Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states | en_US |
dc.type | Article | en_US |
dc.relation.no | 32 | - |
dc.relation.volume | 4 | - |
dc.identifier.doi | 10.1039/c6tc01199c | - |
dc.relation.page | 7571-7576 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Sheng, Jiazhen | - |
dc.contributor.googleauthor | Choi, Dong-Won | - |
dc.contributor.googleauthor | Lee, Seung-Hwan | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.relation.code | 2016001750 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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