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Luminance and charge transport mechanisms for phosphorescent organic light-emitting devices fabricated utilizing a tris(2-phenylpyridine)iridium-doped N,N '-dicarbazolyl-3,5-benzene emitting layer

Title
Luminance and charge transport mechanisms for phosphorescent organic light-emitting devices fabricated utilizing a tris(2-phenylpyridine)iridium-doped N,N '-dicarbazolyl-3,5-benzene emitting layer
Author
김태환
Keywords
Phosphorescent organic light-emitting diode; Triplet exciton; Luminance efficiency enhancement
Issue Date
2011-05
Publisher
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Citation
5th International Conference on Technological Advances of Thin Films & Coatings, Thin Solid Films 2011 519(15):5253-5256
Abstract
The luminance and the charge transport mechanisms for phosphorescent organic light-emitting devices (PHOLEDs) fabricated utilizing a tris(2-phenylpyridine)iridium (Ir(ppy)(3))-doped N,N'-dicarbazolyl-3,5-benzene (mCP) emitting layer (EML) were investigated to improve the luminance efficiency of PHOLEDs. When Ir(ppy)(3) molecules existed on the electron transport layer (EFL) side of the EML, the current density of the PHOLED with an mCP EML containing an Ir(ppy)(3)-doped thin layer increased. The Ir(ppy)(3)-related electroluminescence (EL) intensity of the PHOLEDs with an Ir(ppy)(3)-doped EML increased with increasing operating voltage. The increase in the current density was due to the lowest unoccupied molecular orbital levels of the Ir(ppy)(3) and the 2,9dimethyl-4,7-diphenyl-1,10-phenanthroline ETL being identical, and the increase in the EL intensity could be attributed to a movement of the recombination zone to the center of the EML due to an increase in the electron injection from the ETL into the EML at high voltages.
URI
https://www.sciencedirect.com/science/article/pii/S0040609011002203?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/72819
ISSN
0040-6090
DOI
10.1016/j.tsf.2011.01.170
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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