Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-07-24T08:05:29Z | - |
dc.date.available | 2018-07-24T08:05:29Z | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; JAN 2011, 11 1, p449-p452, 4p. | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000001/art00074 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72744 | - |
dc.description.abstract | InP nanoparticles were formed using a solution method, and the InP nanoparticles that were embedded in a polystyrene (PS) layer were formed using the spin-coating method. The transmission electron microscopy images showed that the InP nanoparticles were randomly distributed in the PS layer. The measured capacitance voltage (C-V) of the Al/InP nanoparticles embedded in the PS layer/PS/p-Si(100) device at 300 K showed a clockwise hysteresis of the C-V curve. Based on the C-V results, the origin of variations in the memory storage of nonvolatile memory devices that were fabricated using InP nanoparticles embedded in a PS layer due to the scale-down was described. | en_US |
dc.description.sponsorship | This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R0A2007-000-20044-0). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA | en_US |
dc.subject | Nonvolatile Memory Devices | en_US |
dc.subject | Polystyrene | en_US |
dc.subject | InP Nanoparticles | en_US |
dc.subject | Solution Method | en_US |
dc.subject | Scale-Down | en_US |
dc.title | Variations in the Memory Capability of Nonvolatile Memory Devices Fabricated Using Hybrid Composites of InP Nanoparticles and a Polystyrene Layer Due to the Scale-Down | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1166/jnn.2011.3172 | - |
dc.relation.page | 449-452 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Lee, S. H. | - |
dc.contributor.googleauthor | Yun, D. Y. | - |
dc.contributor.googleauthor | Jung, J. H. | - |
dc.contributor.googleauthor | You, J. H. | - |
dc.contributor.googleauthor | Kim, T. W. | - |
dc.contributor.googleauthor | Ryu, E. | - |
dc.contributor.googleauthor | Kim, S. W. | - |
dc.relation.code | 2011214452 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.