Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors
- Title
- Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors
- Author
- 오새룬터
- Keywords
- Positive bias stress (PBS); InGaZnO thin-film transistor; self-aligned coplanar structure
- Issue Date
- 2017-05
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v. 38, No. 5, Page. 580-583
- Abstract
- We propose an experimental method to decompose the positive gate-bias stress (PBS)induced threshold voltage shift (Delta V-th) of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) into the contributions of distinct degradation mechanisms. Topgate self-aligned coplanar structure TFTs are used for this letter. Stress-time-divided measurements, which combine the subgap density-of-states (DOS) extraction and the analysis on recovery characteristics, are performed to separate the Delta V-th components. Change in excess oxygen (O-ex)-related DOS is clearly observed, and Delta V-th by PBS is quantitatively decomposed into the contributions of the active O-ex, and the deep and shallow gate insulator traps. The quantitative decomposition of PBS-induced Delta V-th provides physical insight and key guidelines for PBS stability optimization of a-IGZO TFTs.
- URI
- https://ieeexplore.ieee.org/abstract/document/7875466/https://repository.hanyang.ac.kr/handle/20.500.11754/72258
- ISSN
- 0741-3106; 1558-0563
- DOI
- 10.1109/LED.2017.2681204
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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