236 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author장재영-
dc.date.accessioned2018-06-14T06:29:47Z-
dc.date.available2018-06-14T06:29:47Z-
dc.date.issued2016-06-
dc.identifier.citationJOURNAL OF MATERIALS CHEMISTRY C, v. 4, NO 23, Page. 5398-5406en_US
dc.identifier.issn2050-7526-
dc.identifier.issn2050-7534-
dc.identifier.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC00798H#!divAbstract-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/72074-
dc.description.abstractLight-responsive spirotype compounds have been receiving attention as attractive smart materials because of their various potential applications in organic optoelectronic devices, based on organic field-effect transistors (OFETs). However, it still remains a challenge to apply the organic flash memory devices using spirotype compounds due to the relatively poor development of new photosensitive electret materials. Here, we report the synthesis of a novel photosensitive polymer electret material, spiropyran, containing poly(3,5-benzoic acid hexafluoroisopropylidene diphthalimide) (6FDA-DBA-SP), and the development of light-responsive flexible memory devices using the 6FDA-DBA-SP electret layer. The charge trapping properties of 6FDA-DBA-SP under light illumination were enhanced by the electron withdrawing properties and lowering energetic barrier of charge trapping between 6FDA-DBA-SP and pentacene analysed by measuring the electronic structures at the pentacene/6FDA-DBA-SP interfaces. The resulting OFETs showed enlarged hysteresis under white-light illumination and exhibited bi-stable current states after the light-assisted programing and erasing processes, and they were utilized in non-volatile flexible memory device applications.en_US
dc.description.sponsorshipThis work was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean Government (MSIP) (2014R1A2A1A05004993 and 2014R1A1A1005896). The authors thank the Pohang Accelerator Laboratory for providing access to the 4D beamline used in this study.en_US
dc.language.isoenen_US
dc.publisherROYAL SOC CHEMISTRYen_US
dc.subjectPOLYIMIDE ELECTRETSen_US
dc.subjectLOW-VOLTAGEen_US
dc.subjectGATE DIELECTRICSen_US
dc.subjectCHARGE-TRANSFERen_US
dc.subjectFLASH-MEMORYen_US
dc.subjectDEVICESen_US
dc.subjectPHOTOTRANSISTORSen_US
dc.subjectSEMICONDUCTORen_US
dc.subjectPHOTOCHROMISMen_US
dc.subjectMECHANISMSen_US
dc.titleLight-responsive spiropyran based polymer thin films for use in organic field-effect transistor memoriesen_US
dc.typeArticleen_US
dc.relation.no23-
dc.relation.volume4-
dc.identifier.doi10.1039/c6tc00798h-
dc.relation.page5398-5406-
dc.relation.journalJOURNAL OF MATERIALS CHEMISTRY C-
dc.contributor.googleauthorJeong, Yong Jin-
dc.contributor.googleauthorYoo, Eun Joo-
dc.contributor.googleauthorKim, Lae Ho-
dc.contributor.googleauthorPark, Seonuk-
dc.contributor.googleauthorJang, Jaeyoung-
dc.contributor.googleauthorKim, Se Hyun-
dc.contributor.googleauthorLee, Seung Woo-
dc.contributor.googleauthorPark, Chan Eon-
dc.relation.code2016001750-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE