Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2018-06-14T06:29:47Z | - |
dc.date.available | 2018-06-14T06:29:47Z | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v. 4, NO 23, Page. 5398-5406 | en_US |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC00798H#!divAbstract | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/72074 | - |
dc.description.abstract | Light-responsive spirotype compounds have been receiving attention as attractive smart materials because of their various potential applications in organic optoelectronic devices, based on organic field-effect transistors (OFETs). However, it still remains a challenge to apply the organic flash memory devices using spirotype compounds due to the relatively poor development of new photosensitive electret materials. Here, we report the synthesis of a novel photosensitive polymer electret material, spiropyran, containing poly(3,5-benzoic acid hexafluoroisopropylidene diphthalimide) (6FDA-DBA-SP), and the development of light-responsive flexible memory devices using the 6FDA-DBA-SP electret layer. The charge trapping properties of 6FDA-DBA-SP under light illumination were enhanced by the electron withdrawing properties and lowering energetic barrier of charge trapping between 6FDA-DBA-SP and pentacene analysed by measuring the electronic structures at the pentacene/6FDA-DBA-SP interfaces. The resulting OFETs showed enlarged hysteresis under white-light illumination and exhibited bi-stable current states after the light-assisted programing and erasing processes, and they were utilized in non-volatile flexible memory device applications. | en_US |
dc.description.sponsorship | This work was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korean Government (MSIP) (2014R1A2A1A05004993 and 2014R1A1A1005896). The authors thank the Pohang Accelerator Laboratory for providing access to the 4D beamline used in this study. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | POLYIMIDE ELECTRETS | en_US |
dc.subject | LOW-VOLTAGE | en_US |
dc.subject | GATE DIELECTRICS | en_US |
dc.subject | CHARGE-TRANSFER | en_US |
dc.subject | FLASH-MEMORY | en_US |
dc.subject | DEVICES | en_US |
dc.subject | PHOTOTRANSISTORS | en_US |
dc.subject | SEMICONDUCTOR | en_US |
dc.subject | PHOTOCHROMISM | en_US |
dc.subject | MECHANISMS | en_US |
dc.title | Light-responsive spiropyran based polymer thin films for use in organic field-effect transistor memories | en_US |
dc.type | Article | en_US |
dc.relation.no | 23 | - |
dc.relation.volume | 4 | - |
dc.identifier.doi | 10.1039/c6tc00798h | - |
dc.relation.page | 5398-5406 | - |
dc.relation.journal | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.contributor.googleauthor | Jeong, Yong Jin | - |
dc.contributor.googleauthor | Yoo, Eun Joo | - |
dc.contributor.googleauthor | Kim, Lae Ho | - |
dc.contributor.googleauthor | Park, Seonuk | - |
dc.contributor.googleauthor | Jang, Jaeyoung | - |
dc.contributor.googleauthor | Kim, Se Hyun | - |
dc.contributor.googleauthor | Lee, Seung Woo | - |
dc.contributor.googleauthor | Park, Chan Eon | - |
dc.relation.code | 2016001750 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
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