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dc.contributor.author송윤흡-
dc.date.accessioned2018-06-11T05:05:52Z-
dc.date.available2018-06-11T05:05:52Z-
dc.date.issued2016-06-
dc.identifier.citation2016년도 대한전자공학회 하계종합학술대회, Page. 422-425en_US
dc.identifier.urihttp://www.dbpia.co.kr/Journal/ArticleDetail/NODE06724406-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/71964-
dc.description.abstractAccording to Moor’s law, Scaling of NAND flash memory was continued but nowadays two dimensional structure was reached the physical limit. Consequently three dimensional structure was researched and produced. Mechanical stress occurs reliability problem and change electrical characteristics. Especially in multi-layer structure, mechanical stress is one of the most important factor that determines cell characteristics and reliability. In this paper, we investigate mechanical stress distribution and effect of annealing temperature in 3D NAND flash memory.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Science, ICT and Future Planning. (NRF-2015R1A2A2A01007289).en_US
dc.language.isoko_KRen_US
dc.publisher대한전자공학회en_US
dc.title3차원 구조 NAND flash memory의 mechanical stress 분포 및 온도 영향성에 관한 연en_US
dc.title.alternativeA study of mechanical stress distribution and temperature effect in three dimensional NAND flash memoryen_US
dc.typeArticleen_US
dc.relation.page422-425-
dc.relation.journal전자공학회지-
dc.contributor.googleauthor남궁연-
dc.contributor.googleauthor양형준-
dc.contributor.googleauthor안준섭-
dc.contributor.googleauthor송윤흡-
dc.contributor.googleauthorNamkoong, Yeon-
dc.contributor.googleauthorYang, Hyungjun-
dc.contributor.googleauthorAn, JunSeop-
dc.contributor.googleauthorSong, Yunheub-
dc.relation.code2012220550-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidyhsong2008-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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