Effect of oxygen partial pressure contents on the properties of Al-doped ZnO thin films prepared by radio frequency sputtering
- Title
- Effect of oxygen partial pressure contents on the properties of Al-doped ZnO thin films prepared by radio frequency sputtering
- Author
- Kwan-San Hui
- Keywords
- Al-doped ZnO film; Magnetron sputtering; Oxygen partial pressure
- Issue Date
- 2011-07
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC, SUNGDONG POST OFFICE, P O BOX 27, SEOUL 133-600, SOUTH KOREA
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH; APR 2011, 12 2, p150-p154, 5p.
- Abstract
- Al-doped Zinc Oxide (AZO) films were deposited on glass substrates by radio frequency (R.F.) magnetron sputtering technique. The properties of the films were controlled by adjusting the oxygen flow contents as a mixture of Ar and O(2) gases. The structural, electrical and optical properties of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), a UV-visible spectrometer, as well as Hall effect measurements. Results revealed that a film deposited with an oxygen partial pressure content of 0% had a hexagonal structure, a strongly preferred orientation with the c-axis perpendicular to the substrate and the lowest resistivity of about 6.9 x 10(-4) Omega cm. The optical transmittance spectra showed more than 80% transmittance in the visible region, and the band gap was found to be direct. Strong violet emission located at 2.96 eV was observed in the AZO films deposited with an oxygen partial pressure content of 0%.
- URI
- http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.717.9740&rep=rep1&type=pdfhttps://repository.hanyang.ac.kr/handle/20.500.11754/70457
- ISSN
- 1229-9162
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
- Files in This Item:
- 10.1.1.717.9740.pdfDownload
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