Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition
- Title
- Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition
- Author
- 박진섭
- Keywords
- Catalyst-free; InN nanorod; Metal-organic chemical vapor deposition (MOCVD)
- Issue Date
- 2012-01
- Publisher
- American Scientific Publishers
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol.12, No.2 [2012], p1645-1648
- Abstract
- We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O 3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 °C, complete InN nanorods with typical diameters of 150 nm and length of ̃3.5 μm were grown with hexagonal facets. θ-2θ X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O 3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along (0001) with (10-10) facets.
- URI
- http://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000002/art00157http://hdl.handle.net/20.500.11754/67874
- ISSN
- 1862-6300
- DOI
- 10.1166/jnn.2012.4698
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML