Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements
- Title
- Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements
- Author
- 성명모
- Keywords
- CHARGE TRAPPING; METALLIC NANOPARTICLES; NON-VOLATILE MEMORY; ZINC OXIDE
- Issue Date
- 2012-02
- Publisher
- American Scientific Publishers
- Citation
- Journal of Nanoscience and Nanotechnology, 2012, 12(2), P.1344~1351
- Abstract
- In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au-NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au-NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future.
- URI
- http://www.ingentaconnect.com/content/asp/jnn/2012/00000012/00000002/art00090http://hdl.handle.net/20.500.11754/67520
- ISSN
- 1533-4880
- DOI
- 10.1166/jnn.2012.4688
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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