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Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

Title
Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection
Other Titles
GaN high electron mobility transistor for DNA hybridization detection
Author
Jong Wook Hong
Keywords
GOLD; SENSOR; ELECTROCHEMISTRY; SPECTROSCOPY; MONOLAYERS; SURFACE
Issue Date
2012-06
Publisher
Amer INST Physics
Citation
Applied Physics Letters, 2012, 100(23), 232109
Abstract
Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the self-assembled monolayers of 11-mercaptoundecanoic acid. The sensor exhibited a substantial current drop upon introduction of complimentary DNA to the gate well, which is a clear indication of the hybridization. The application of 3 base-pair mismatched target DNA showed little change in output current characteristics of the transistor. Therefore, it can be concluded that our DNA sensor is highly specific to DNA sequences. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.4727895]
URI
http://aip.scitation.org/doi/10.1063/1.4727895http://hdl.handle.net/20.500.11754/67251
ISSN
0003-6951
DOI
10.1063/1.4727895
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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