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dc.contributor.authorJong Wook Hong-
dc.date.accessioned2018-04-16T01:16:18Z-
dc.date.available2018-04-16T01:16:18Z-
dc.date.issued2012-06-
dc.identifier.citationApplied Physics Letters, 2012, 100(23), 232109en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://aip.scitation.org/doi/10.1063/1.4727895-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/67251-
dc.description.abstractLabel-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the self-assembled monolayers of 11-mercaptoundecanoic acid. The sensor exhibited a substantial current drop upon introduction of complimentary DNA to the gate well, which is a clear indication of the hybridization. The application of 3 base-pair mismatched target DNA showed little change in output current characteristics of the transistor. Therefore, it can be concluded that our DNA sensor is highly specific to DNA sequences. (C) 2012 American Institute of Physics. [http://dx.doi.org.access.hanyang.ac.kr/10.1063/1.4727895]en_US
dc.description.sponsorshipThis project was funded by the United States Department of Agriculture (USDA) through Auburn University Detection and Food Safety Center (AUDFS). The authors would like to thank Dr. David Deen, SVT Associates, Inc., for his valuable comments to the manuscript and Dr. David Stanbury, Department of Chemistry and Biochemistry, Auburn University, for allowing us to use his UV-Vis spectrometer.en_US
dc.language.isoenen_US
dc.publisherAmer INST Physicsen_US
dc.subjectGOLDen_US
dc.subjectSENSORen_US
dc.subjectELECTROCHEMISTRYen_US
dc.subjectSPECTROSCOPYen_US
dc.subjectMONOLAYERSen_US
dc.subjectSURFACEen_US
dc.titleBiofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detectionen_US
dc.title.alternativeGaN high electron mobility transistor for DNA hybridization detectionen_US
dc.typeArticleen_US
dc.relation.no23-
dc.relation.volume100-
dc.identifier.doi10.1063/1.4727895-
dc.relation.page1-4-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorThapa, R.-
dc.contributor.googleauthorAlur, S.-
dc.contributor.googleauthorKim, K.-
dc.contributor.googleauthorTong, F.-
dc.contributor.googleauthorSharma, Y.-
dc.contributor.googleauthorKim, M.-
dc.contributor.googleauthorAhyi, C.-
dc.contributor.googleauthorDai, J.-
dc.contributor.googleauthorHong, J.W.-
dc.contributor.googleauthorBozack, M.-
dc.relation.code2012200866-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjwh-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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