Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
- Title
- Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
- Author
- 박진섭
- Keywords
- cattering; Condensed matter properties; Crystallography; Mechanical properties; Solids; Semiconductors; Crystal defects; Gemstones; Classical mechanics; Equipment and apparatus
- Issue Date
- 2012-05
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, Vol.100, No.19 [2012], p1-4
- Abstract
- A simple and inexpensive technique to improve the emission efficiency of nonpolar a-plane light emitting diodes (LEDs) is proposed. The 3-dimensional growth nature of a-plane GaN was utilized to form the regrowth template of a-plane GaN. Subsequently, the controlled integration of silica nano-spheres (CIS) into the regrowth template is performed to improve the crystal quality of a-plane GaN by epitaxial lateral overgrowth method. In addition, the CIS improves light extraction by the scattering process. The light output power from the CIS a-plane GaN LEDs showed 130%-150% increase compared to that of LED without silica nano-spheres.
- URI
- https://aip.scitation.org/doi/10.1063/1.4716472http://hdl.handle.net/20.500.11754/66945
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4716472
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML