Design of a 1~10 ㎓ High Gain Current Reused Low Noise Amplifier in 0.18㎛ CMOS Technology

Abstract

In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ㎛ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A π-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9～18.1 ㏈ and a noise figure (NF) of 4.05～6.21 ㏈ over the frequency band of interest (1～10 ㎓). The total power consumption of the proposed UWB LNA is 10.1 ㎽ from a 1.4 V supply voltage, and the chip area is 0.95×0.9 ㎜.