Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer
- Title
- Electrical characteristics and operating mechanisms of nonvolatile memory devices fabricated utilizing core-shell CuInS2-ZnS quantum dots embedded in a poly(methyl methacrylate) layer
- Author
- 김태환
- Keywords
- CDSE NANOPARTICLES; BISTABILITY
- Issue Date
- 2011-11
- Publisher
- Amer INST Physics
- Citation
- Applied Physics Letters, Nov 2011, 99(19)
- Abstract
- Nonvolatile memory devices were fabricated with core-shell CuInS2-ZnS quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA). Capacitance-voltage (C-V) measurements at 300K on the Al/CuInS2-ZnS QDs embedded in PMMA layer/p-Si device showed capacitance hysteresis behaviors with a flatband voltage shift. The memory window of the device increased with increasing applied sweep voltage and saturated at high electric fields due to the current leakage. Capacitance-time measurements showed that the retention time was larger than 1 x 10(5) s that was more than 10 years. The operating mechanisms for the devices are described on the basis of the C-V curves.
- URI
- http://aip.scitation.org.ssl.access.hanyang.ac.kr/doi/full/10.1063/1.3659473http://hdl.handle.net/20.500.11754/54944
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3659473
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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