Investigation of In-situ Doping Profile for N+/P/N+ Bidirectional Switching Device using Si1-xGex/Si/Si1-xGex Structure
- Title
- Investigation of In-situ Doping Profile for N+/P/N+ Bidirectional Switching Device using Si1-xGex/Si/Si1-xGex Structure
- Other Titles
- P
- Author
- 송윤흡
- Keywords
- Switching device; UHV-CVD; SiGe; N+PN+; STT-MRAM
- Issue Date
- 2014-11
- Publisher
- The Institute of Electronics, Information and Communication Engineers
- Citation
- IEICE Electronics Express, 2015, 12(7), P.20150098~20150098
- Abstract
- We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better Ion/Ioff ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and Ion/Ioff ratio. After the simulation, a junction device with N+ Si0.8Ge0.2 / P Si / N+ Si0.8Ge0.2 and an area of 4 x 4 um2 is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM.
- URI
- https://www.jstage.jst.go.jp/article/elex/12/7/12_12.20150098/_articlehttp://hdl.handle.net/20.500.11754/54371
- ISSN
- 1349-2543
- DOI
- 10.1587/elex.12.20150098
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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