Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene
- Title
- Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene
- Author
- 안진호
- Keywords
- SINGLE-LAYER GRAPHENE; LARGE-AREA; PHOTOCURRENT; FILMS; TRANSISTORS; GENERATION; AL2O3
- Issue Date
- 2014-04
- Publisher
- AMER INST PHYSICS
- Citation
- Applied Physics Letters, 2014, 104(16) , p.161902
- Abstract
- A photodetector generating a nearly constant photocurrent in a very wide spectral range from ultraviolet (UV) to infrared has been demonstrated using chemical vapor deposited (CVD) graphene. Instability due to a photochemical reaction in the UV region has been minimized using an Al2O3 passivation layer, and a responsivity comparable to that of Highly Ordered Pyrolytic Graphite graphene photodetectors of similar to 8mA/W has been achieved at a 0.1V bias, despite high defect density in the CVD graphene. A highly sensitive multi-band photodetector using graphene has many potential applications including optical interconnects, multi-band imaging sensors, highly sensitive motion detectors, etc. (C) 2014 AIP Publishing LLC.
- URI
- https://aip.scitation.org/doi/10.1063/1.4872267http://hdl.handle.net/20.500.11754/54082
- ISBN
- 1077-3118
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4872267
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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