Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD

Abstract

Photo-induced deposition of SiOCH thin films and their trench filling properties are discussed. Octamethyl-cycloterasiloxan (OMCTS) was used as a precursor and Xe-2 excimer lamp was used as a light source. The deposition temperature was 80 degrees C and the reactor pressure was maintained at 38.5 Pa. The relative permittivity of as-deposited film was 7.9. Due to the UV cure process, those OH-related bonds in the film were significantly decreased. The k-value of the UV cure film was 2.1. Photo-induced SiOCH was employed to achieve bottom-up filling of high-aspect-ratio features (A/S ˃ 7.5). (C) 2016 The Electrochemical Society. All rights reserved.