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dc.contributor.author장재영-
dc.date.accessioned2018-03-29T08:36:35Z-
dc.date.available2018-03-29T08:36:35Z-
dc.date.issued2013-09-
dc.identifier.citationScience of Advanced Materials, 2013, 5(9), P.1323-1327en_US
dc.identifier.issn1947-2935-
dc.identifier.urihttp://www.ingentaconnect.com/content/asp/sam/2013/00000005/00000009/art00024-
dc.description.abstractThe electrical performance of a thin film in an organic thin film transistor depends on the film morphology. A mixed solvent system was demonstrated to provide a useful method for controlling the morphologies of organic semiconductor layers in organic thin film transistor. To overcome the limitations on solvent properties, control over the morphology of a 2-(6-((2-ethylhexyl)oxy)naphthalen-2-yl)anthracene film using a tetrahydrofuran/chloroform mixed system (with ratio of 1:5 w/w). Here, in an effort to achieve improved the device electrical performance properties for use in organic thin film transistors, we have examined a mixed solvent system that is suitable for the fabrication of organic semiconductors.en_US
dc.description.sponsorshipThis work was supported by a grant (2012054547) from the Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea. This work was also supported by a grant from the Korea Science and Engineering Foundation (KOSEF), funded by the Korean Government (MEST) (2012-047047 and 2012-0000127), and by MEST and PAL, XFEL project, Korea. So-MM Park and Seung-Jin Yoo thank the support by MKE and KIAT through the Workforce Development Program in Strategic Technology.en_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.subjectOrganic Thin Film Transistor (OTFT)en_US
dc.subjectMixed Solventen_US
dc.subjectOrganic Semiconductoren_US
dc.subjectMorphologyen_US
dc.subjectFused Aceneen_US
dc.subjectCrystallinityen_US
dc.titleThin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistorsen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume5-
dc.identifier.doi10.1166/sam.2013.1566-
dc.relation.page1323-1327-
dc.relation.journalScience of Advanced Materials-
dc.contributor.googleauthorAn, Tae Kyu-
dc.contributor.googleauthorPark, So-Min-
dc.contributor.googleauthorNam, Sooji-
dc.contributor.googleauthorHwang, Jaeyeong-
dc.contributor.googleauthorYoo, Seung-Jin-
dc.contributor.googleauthorLee, Min-Jung-
dc.contributor.googleauthorYun, Won Min-
dc.contributor.googleauthorJang, Jaeyoung-
dc.contributor.googleauthorCha, Hyojung-
dc.contributor.googleauthorHwang, Jihun-
dc.relation.code2013007770-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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