Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정두석 | - |
dc.date.accessioned | 2018-03-29T02:43:15Z | - |
dc.date.available | 2018-03-29T02:43:15Z | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | NANOSCALE, v.8, no.20, page.10799-10805 | en_US |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.issn | 2040-3372 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR01277A#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/53599 | - |
dc.description.abstract | A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb (Zr0.3Ti0.7)O-3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ. | en_US |
dc.description.sponsorship | The authors would like to thank Paul Meuffels for preparing the ceramic target. Financial support by the Deutsche Forschungsgemeinschaft through the SFB 855 01/10 entitled "Magnetoelectric Composites - Future Biomagnetic Interfaces" is acknowledged. Financial support provided via ERA. Net RUS project NANO-C entitled "Artificial Multiferroic Nano composites: Towards Magnetoelectric Materials-by-Design" (01DJ13019) is gratefully acknowledged. This work was also supported by the Deutsche Forschungsgemeinschaft (DFG) via the Research-Group grant FOR 2093. D. S. J acknowledges a Korea Institute of Science and Technology grant (grant number 2E26691). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | RESISTIVE SWITCHING MEMORIES | en_US |
dc.subject | ELECTRORESISTANCE | en_US |
dc.subject | INTERFACE | en_US |
dc.subject | MAGNETORESISTANCE | en_US |
dc.subject | HETEROSTRUCTURES | en_US |
dc.subject | POLARIZATION | en_US |
dc.subject | MECHANISMS | en_US |
dc.title | Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c6nr01277a | - |
dc.relation.journal | NANOSCALE | - |
dc.contributor.googleauthor | Soni, Rohit | - |
dc.contributor.googleauthor | Petraru, Adrian | - |
dc.contributor.googleauthor | Nair, Harikrishnan S. | - |
dc.contributor.googleauthor | Vavra, Ondrej | - |
dc.contributor.googleauthor | Ziegler, Martin | - |
dc.contributor.googleauthor | Kim, Seong Keun | - |
dc.contributor.googleauthor | Jeong, Doo Seok | - |
dc.contributor.googleauthor | Kohlstedt, Hermann | - |
dc.relation.code | 2016000163 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | dooseokj | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.