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Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

Title
Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter
Author
박진성
Keywords
InGaZnO; Oxide thin film transistor; Short channel; Load invertor
Issue Date
2012-01
Publisher
Springer Science+Business Media
Citation
Journal of electroceramics, 2012, 28권,1호, P.74-79
Abstract
The characteristics of amorphous In-Ga-Zn-O(IGZO) thin film transistors (TFTs) and load inverters with a short channel length were studied. The IGZO TFTs showed a mobility value of > 5 cm(2)/Vs with a V-th value of -1.62 V. No degradation of the TFT properties, such as a negative shift of V-th or degradation of the subthreshold slope by the short-channel effect, were observed down to a channel length of 2 mu m. A load inverter using an IGZO TFT with a gate length of 2 mu m and resistor of 1 M Omega was fabricated and characterized, and a voltage gain of 4 was obtained at a V-DD value of 10 V. Additionally, the action of a dynamic inverter operating at frequencies of 1 and 10 kHz was characterized. Complete inverter action was obtained at 1 kHz, while an delay time of 0.53 mu s was observed at 10 kHz. These promising results indicate that short channel IGZO TFTs are candidate for TFTs in the display industry, including active-matrix organic light-emitting diodes or multi-view three-dimension TV.
URI
https://link.springer.com/article/10.1007%2Fs10832-011-9680-5http://hdl.handle.net/20.500.11754/53028
ISSN
1385-3449; 1573-8663
DOI
10.1007/s10832-011-9680-5
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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