Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors
- Title
- Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors
- Author
- 오새룬터
- Issue Date
- 2016-04
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 108, No. 14, Article no. 141604
- Abstract
- We investigated the impact of excess oxygen on positive bias temperature stress (PBTS) instability of self-aligned coplanar amorphous InGaZnO thin-film transistors. We focus on the interface region which is compositionally differentiated from the bulk material on each side. The threshold voltage shift under PBTS is proportional to the extracted density of interface trap states that act as electron traps. The density of interface trap states is extracted from capacitance-voltage measurements with monochromatic light of varying wavelengths. We introduce a figure-of-merit that quantifies the amount of excess oxygen relative to the metal cation composition in the interface region. Minimization of interfacial excess oxygen from 112.4% to 101.2% reduces the density of interface trap states by a factor of 2.77, resulting in improvement of PBTS instability from a threshold voltage shift value of 4.42V to 0.35V. (C) 2016 AIP Publishing LLC.
- URI
- https://aip.scitation.org/doi/abs/10.1063/1.4945404http://hdl.handle.net/20.500.11754/52777
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4945404
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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