Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current
- Title
- Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current
- Author
- 유봉영
- Keywords
- TSV; Cu; Electrodeposition; Pulse-reverse current; SUPPRESSOR; TECHNOLOGY
- Issue Date
- 2016-04
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- MICROELECTRONIC ENGINEERING, v. 156, Page. 15-18
- Abstract
- The through-Si-via (TSV) interconnection provides the ideal 3D interconnection in a next generation semiconductor device which has significantly innovated function, excellent performance and high efficiency. In this study, TSV fillings by electrodeposition of Cu with various current forms were carried out to improve the via filling rate. Especially, the influence of reverse current density, and average current density on the TSV filling property was studied. similar to 7% of improvement in via filling, rate compared with using direct current (DC) was achieved by applying the pulse-reverse current form, which was mainly caused by effective adsorption and redistribution of additives inside via. (C) 2016 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0167931716300624http://hdl.handle.net/20.500.11754/52554
- ISSN
- 0167-9317; 1873-5568
- DOI
- 10.1016/j.mee.2016.02.020
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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