2003-07 | Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy | 오재응 |
2004-03 | Transport measurement through stacked InAs self-assembled quantum dots in time domain | 오재응 |
2019-09 | 지역문화와 기술이 융합된 새로운 스마트시티 구축 | 최명렬 |
2004-12 | InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm | 오재응 |
2005-04 | Thickness effects of Al0.5Ga0.5N barriers on the optical properties of delta-AlGaN-inserted GaN-coupled multiquantum wells | 오재응 |
2005-04 | Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy | 오재응 |
2005-06 | Blue-light emission from GaN/AlGaN multiple quantum wells with an Al 0.5Ga0.5N perturbation monolayers grown by molecular beam epitaxy | 오재응 |
2005-07 | Growth and optical properties on formation of self-assembled GaN nanorod grown on Si (111) substrates | 오재응 |
2005-11 | Deep level related to a two-dimensional electron gas region in Al xGa 1-xN/GaN heterointerfaces | 오재응 |
2012-07 | Phase Behaviors of AlN Layers Grown on Si(111) Substrate by Metalorganic Chemical Vapor Deposition: A Transmission Electron Microscopy Study | 오재응 |
1997-09 | Active noise control with the active muffler in automotive exhaust systems | 오재응 |
1999-04 | A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure | 오재응 |
2005-12 | 고기능 RFID 태그를 위한 보안 프로토콜 | 최명렬 |
2006-05 | Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy | 오재응 |
2022-11 | Method for Optimization of a Shielding Effectiveness Measurement System Using Shielding Concrete Blocks for IEMI | 최명렬 |
2006-06 | InAs/InGaAs 양자점을 이용한 전계광학변조기 | 오재응 |
2006-06 | Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study | 오재응 |
2006-07 | 얇은 AlSb 완충층을 사용한 GaSb/Si(001) 박막평가 | 오재응 |
2006-08 | 저가형 CSTN-LCD 동영상 프로세서 설계 | 최명렬 |
2020-11 | 신경망을 이용한 세일링 요트 리제너레이션 시스템의 배터리 충전 예측 | 최명렬 |