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Issue DateTitleAuthor(s)
2003-07Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy오재응
2004-03Transport measurement through stacked InAs self-assembled quantum dots in time domain오재응
2019-09지역문화와 기술이 융합된 새로운 스마트시티 구축최명렬
2004-12InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 μm오재응
2005-04Thickness effects of Al0.5Ga0.5N barriers on the optical properties of delta-AlGaN-inserted GaN-coupled multiquantum wells오재응
2005-04Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy오재응
2005-06Blue-light emission from GaN/AlGaN multiple quantum wells with an Al 0.5Ga0.5N perturbation monolayers grown by molecular beam epitaxy오재응
2005-07Growth and optical properties on formation of self-assembled GaN nanorod grown on Si (111) substrates오재응
2005-11Deep level related to a two-dimensional electron gas region in Al xGa 1-xN/GaN heterointerfaces오재응
2012-07Phase Behaviors of AlN Layers Grown on Si(111) Substrate by Metalorganic Chemical Vapor Deposition: A Transmission Electron Microscopy Study오재응
1997-09Active noise control with the active muffler in automotive exhaust systems오재응
1999-04A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure오재응
2005-12고기능 RFID 태그를 위한 보안 프로토콜최명렬
2006-05Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy오재응
2022-11Method for Optimization of a Shielding Effectiveness Measurement System Using Shielding Concrete Blocks for IEMI최명렬
2006-06InAs/InGaAs 양자점을 이용한 전계광학변조기오재응
2006-06Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study오재응
2006-07얇은 AlSb 완충층을 사용한 GaSb/Si(001) 박막평가오재응
2006-08저가형 CSTN-LCD 동영상 프로세서 설계최명렬
2020-11신경망을 이용한 세일링 요트 리제너레이션 시스템의 배터리 충전 예측최명렬

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