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COLLEGE OF ENGINEERING SCIENCES[E](공학대학)
ELECTRICAL ENGINEERING(전자공학부)
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Results 1-6 of 6 (Search time: 0.001 seconds).
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Issue Date
Title
Author(s)
2016-12
Statistical distributions of row-hammering induced failures in DDR3 components
백상현
2016-02
Single-Event Transient Sensitivity Evaluation of Clock Networks at 28-nm CMOS Technology
백상현
2016-02
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 x nm technology
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2016-10
Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation
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2016-09
A 65 nm Temporally Hardened Flip-Flop Circuit
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2016-11
An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology
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3 x nm technology
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CMOS TECHNOLOGY
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radiation hardening
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single event effect
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soft error
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SRAMS
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Active-precharge hammering on a r...
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alpha particle
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Cell retention time
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Clock jitter
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