Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer
- Title
- Metal-HfO2-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO2 layer
- Author
- 안진호
- Keywords
- NONVOLATILE MEMORY; FILMS
- Issue Date
- 2014-12
- Publisher
- American Vacuum Society
- Citation
- Journal of Vacuum Science & Technology. A, 2014, 33(1), P.01A153
- Abstract
- The charge trapping properties of metal-HfO2-Ge capacitor as a nonvolatile memory have been investigated with (NH4)(2)S-treated Ge substrate and atomic-layer-deposited HfO2 layer. The interfacial layer generated by (NH4)(2)S-treated Ge substrate reveals a trace of -S- bonding, very sharp interface edges, and smooth surface morphology. The Ru-HfO2-Ge capacitor with (NH4)(2)S-treated Ge substrate shows an enhanced interface state with little frequency dispersion, a lower leakage current, and very reliable properties with the enhanced endurance and retention than Ru-HfO2-Ge capacitor with cyclic-cleaned Ge substrate. (C) 2014 American Vacuum Society.
- URI
- https://avs.scitation.org/doi/10.1116/1.4904730
- ISSN
- 0734-2101; 1520-8559
- DOI
- 10.1116/1.4904730
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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