Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
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dc.contributor.author유창재-
dc.date.accessioned2018-03-24T05:07:20Z-
dc.date.available2018-03-24T05:07:20Z-
dc.date.issued2011-05-
dc.identifier.citationSID International Symposium, 2011, 42(3), P.1609-1611en_US
dc.identifier.isbn978-161839096-7-
dc.identifier.issn0097-966X-
dc.identifier.urihttps://www.tandfonline.com/doi/abs/10.1080/15980316.2011.621327-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/51784-
dc.description.abstractWe report an enhancement of memory characteristics in a bistable chiral splay nematic (BCSN) display mode with reactive mesogens (RMs). The polymerized RMs give rise to hindrance to relaxation in a memory mode and thus a memory retention time is significantly improved in the BCSN mode.en_US
dc.language.isoenen_US
dc.publisherSociety of Information Displayen_US
dc.subjectBistablesen_US
dc.subjectDisplay modesen_US
dc.subjectMemory retention timeen_US
dc.subjectReactive mesogensen_US
dc.titleEnhancement of Memory Characteristics in Bistable Chiral Splay Nematic Display Modeen_US
dc.typeArticleen_US
dc.relation.page1609-1611-
dc.contributor.googleauthorBae, KS-
dc.contributor.googleauthorKim, JH-
dc.contributor.googleauthorYu, CJ-
dc.contributor.googleauthorCha, U-
dc.contributor.googleauthorPark, SJ-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidcjyu-
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