Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-22T02:48:47Z | - |
dc.date.available | 2018-03-22T02:48:47Z | - |
dc.date.issued | 2014-10 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 65권, 7호, 1174-1178 | en_US |
dc.identifier.isbn | 1976-8524 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://dx.doi.org/10.3938/jkps.65.1174 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/50332 | - |
dc.description.abstract | We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V (th) ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO (X) distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O-2. This process is applicable to the TFT manufacturing process with a variable sputtering target. | en_US |
dc.description.sponsorship | Industrial Strategic Technology Development Program (The Next Generation MLC PRAM, 3D ReRAM, Device, Materials and Micro Fabrication Technology Development) - Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea | en_US |
dc.language.iso | en | en_US |
dc.publisher | Korean Physical Society; 1999 | en_US |
dc.subject | IGZO TFT | en_US |
dc.subject | Stability | en_US |
dc.subject | NBIS | en_US |
dc.subject | Si doped | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | PERFORMANCE | en_US |
dc.title | High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 65 | - |
dc.identifier.doi | 10.3938/jkps.65.1174 | - |
dc.relation.page | 1174-1178 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Lee, Hyoung-Rae | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2014034856 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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