Growth of Ge Nanowires on Ge/Si Templates with Indium Catalyst via Metal Organic Chemical Vapor Deposition
- Title
- Growth of Ge Nanowires on Ge/Si Templates with Indium Catalyst via Metal Organic Chemical Vapor Deposition
- Other Titles
- Si Templates with Indium Catalyst via Metal Organic Chemical Vapor Deposition
- Author
- 박진섭
- Keywords
- semiconductor; Ge; nanowire growth; indium catalyst
- Issue Date
- 2012-12
- Publisher
- PRINGER SCIENCE AND BUSINESS MEDIA
- Citation
- Electronic materials letters, 2012, 8(6), P.545-548
- Abstract
- We report on the growth of Ge nanowires on a (111) Si substrate using pre-deposited Ge thin films and indium metal catalyst via metal organic chemical vapor deposition. The indium metal was continuously supplied by a trimethylindium (TMIn) source flow. Transmission electron microscopy and energy disperse spectroscopy results revealed that Ge nanowires grew on the indium droplet/Si substrate and that In metal droplets acted as a catalyst for the growth of Ge nanowires. The possible growth mechanism of Ge nanowires may be supplemented by Ge atoms from a reservoir formed by the eutectic alloy formation due to the reaction of In and Ge.
- URI
- https://link.springer.com/article/10.1007%2Fs13391-012-2080-4http://hdl.handle.net/20.500.11754/50271
- ISSN
- 1738-8090
- DOI
- 10.1007/s13391-012-2080-4
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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