Perpendicular magnetization of CoZr/Pt multilayers
- Title
- Perpendicular magnetization of CoZr/Pt multilayers
- Other Titles
- Pt multilayers
- Author
- 박완준
- Keywords
- Magnetic tunnel junction; Perpendicular magnetic anisotropy; Thermal magnetization stability
- Issue Date
- 2012-05
- Publisher
- Korean Physical Society; 1999
- Citation
- JOURNAL- KOREAN PHYSICAL SOCIETY, 2012, 60(10), P.1690-1694, 5P.
- Abstract
- Recently, the perpendicular magnetization of tunnel junctions has been proposed as a way to reduce the size of spin-transfer torque random access memories. In order to determine the free layer of a magnetic tunnel junction, we present a Co(90)Zr(10) alloy that is expected to have a higher polarization than any other soft magnet. At a thickness of 0.6 nm, CoZr successfully forms a perpendicular magnetization because of the interfacial anisotropy on the CoZr/Pt interfaces. Unlike the Co/Pt multilayer, the CoZr/Pt multilayer shows magnetization recovery following 1.5-T field cooling after 300 A degrees C annealing because Zr insertion prevents the formation of a CoPt alloy. This work proposes CoZr as a free-layer candidate for magnetic tunnel junctions due to its advantages of lower switching current and higher thermal stability.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.60.1690http://hdl.handle.net/20.500.11754/49859
- ISSN
- 0374-4884; 3744-4884
- DOI
- 10.3938/jkps.60.1690
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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