Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light
- Title
- Sub-second photo-annealing of solution-processed metal oxide thin-film transistors via irradiation of intensely pulsed white light
- Author
- 김학성
- Keywords
- ACTIVE CHANNEL LAYER
- Issue Date
- 2014-05
- Publisher
- ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
- Citation
- RSC ADVANCES, 권: 4, 호: 37, 페이지: 19375-19379
- Abstract
- This study demonstrates the efficient photo-annealing of a solution-processed metal oxide active layer in thin film transistors by using intensely pulsed white light (IPWL) irradiation. The IPWL process offers the advantages of room-temperature processing and high processing speed of the order of milliseconds under ambient conditions. Analysis of the chemical composition of the IPWL-annealed thin films indicates that the IPWL irradiation provides sufficient heat energy to convert the molecular precursors to the respective metal oxides. A solution-processed amorphous In-Ga-Zn-O transistor annealed by IPWL irradiation exhibited improved electrical performance with a field-effect mobility of 2.67 cm(2) V-1 s(-1) and I-on/I(of)f of 10(8). The suitability of IPWL for annealing other solution-processed metal oxide semiconductors was verified in IPWL-annealed Hf-In-Zn-O and In-Zn-O thin films.
- URI
- http://pubs.rsc.org/en/Content/ArticleLanding/2014/RA/c4ra01371a#!divAbstracthttp://hdl.handle.net/20.500.11754/49685
- ISSN
- 2046-2069
- DOI
- 10.1039/c4ra01371a
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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